Lateral Epitaxial Overgrowth and Pendeo Epitaxy of 3C-SiC on Si Substrates

Stephen E. Saddow, G.E. Carter, Bruce Geil, T.S. Zheleva, Galyna Melnychuck, M.E. Okhuysen, Michael S. Mazzola, R.D. Vispute, Michael A. Derenge, Matthew H. Ervin, Kenneth A. Jones
2000 Materials Science Forum  
Lateral Epitaxial Overgrowth (LEO) experiments on 3C-SiC were conducted on patterned substrates. Due to the high CVD growth temperatures required for high-quality single-crystal 3C-SiC, dielectric mask materials with higher thermal stability than SiO 2 were used. Experiments were performed with amorphous Si 3 N 4 deposited via PECVD and AlN, deposited both by PLD and MOCVD. These masks were deposited and patterned on (100) Si substrates containing a 4 µm 3C-SiC epitaxial layer grown using a
more » ... dard 3C-SiC growth process. Single crystal 3C-SiC was regrown in the mask window regions. However, polycrystalline 3C-SiC nucleated on the mask stripes for the growth conditions studied. Pendeo epitaxy (PE) was performed on the same material where the 3C-SiC epilayer was etched to form 3C-SiC stripes on a (100) Si substrate. It appears that Pendeo epitaxy was achieved with lateral and vertical growth on the 3C-SiC columns having been observed.
doi:10.4028/www.scientific.net/msf.338-342.245 fatcat:56ymot6aqjchxgklm4u5lebbaa