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Lateral Epitaxial Overgrowth and Pendeo Epitaxy of 3C-SiC on Si Substrates
2000
Materials Science Forum
Lateral Epitaxial Overgrowth (LEO) experiments on 3C-SiC were conducted on patterned substrates. Due to the high CVD growth temperatures required for high-quality single-crystal 3C-SiC, dielectric mask materials with higher thermal stability than SiO 2 were used. Experiments were performed with amorphous Si 3 N 4 deposited via PECVD and AlN, deposited both by PLD and MOCVD. These masks were deposited and patterned on (100) Si substrates containing a 4 µm 3C-SiC epitaxial layer grown using a
doi:10.4028/www.scientific.net/msf.338-342.245
fatcat:56ymot6aqjchxgklm4u5lebbaa