Single-walled carbon nanotube field-effect transistors ͑CNT-FETs͒ were characterized before and after gamma radiation treatment using noise spectroscopy. The results obtained demonstrate that in long channel CNT-FETs with a length of 10 m the contribution of contact regions can be neglected. Moreover, radiation treatment with doses of 1 ϫ 10 6 and 2 ϫ 10 6 rad allows a considerable decrease parallel to the nanotube parasitic conductivity and even the shift region with maximal conductivity to

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... voltage range of nearly zero gate voltage that improves the working point of the FETs. The Hooge parameters obtained before and after gamma radiation treatment with a dose of 1 ϫ 10 6 rad are found to be about 5 ϫ 10 −3 . The parameters are comparable with typical values for conventional semiconductors.