Analysis of Temperature and Drain Voltage Dependence of Substrate Current in Deep Submicrometer MOSFET'S

Y. Amhouche, A. El Abbassi, K. Raïs, R. Rmaily
2001 Active and Passive Electronic Components  
In this paper, a detailed experimental study of channel length, drain voltage and temperature dependence of substrate current Isub in submicrometer MOSFET's is presented. Impact ionization rate is remarkably increased with decreasing channel length L and go up from 10 -7 to 6, 7. 10 -7 when L decrease from 2 to 0.1 lain, this behaviour found expression in a fast increase of the substrate current maximum Isubm,. Moreover it is observed that contrarily of long channels, low temperature operation
more » ... perature operation is favourable to reduce hot carrier effects in submicrometer MOSFET's and may represent a promising alternative for the improvement of the performances of Si integrated circuits.
doi:10.1155/2001/65128 fatcat:6yy4jja6wveqtkln437ahbbsre