Deep-Level Defects in MBE-Grown GaN-Based Laser Structure

T. Tsarova, T. Wosiński, A. Mąkosa, C. Skierbiszewski, I. Grzegory, P. Perlin
2007 Acta Physica Polonica. A  
We present results of deep-level transient spectroscopy investigations of defects in a GaN-based heterostructure of a blue-violet laser diode, grown by plasma-assisted molecular beam epitaxy on a bulk GaN substrate. Three majority-carrier traps, T1 at E C − 0.28 eV, T2 at E C − 0.60 eV, and T3 at EV + 0.33 eV, were revealed in deep-level transient spectra measured under reverse-bias conditions. On the other hand, deep-level transient spectroscopy measurements performed under injection
more » ... , revealed one minority--carrier trap, T4, with the activation energy of 0.20 eV. The three majority--carrier traps were revealed in the spectra measured under different reverse--bias conditions, suggesting that they are present in various parts of the laser--diode heterostructure. In addition, these traps represent different charge--carrier capture behaviours. The T1 trap, which exhibits logarithmic capture kinetics, is tentatively attributed to electron states of dislocations in the n-type wave-guiding layer of the structure. In contrast, the T2, T3, and T4 traps display exponential capture kinetics and are assigned to point defects.
doi:10.12693/aphyspola.112.331 fatcat:ohzaulja6fc53mce2yrwru5m7u