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We present results of deep-level transient spectroscopy investigations of defects in a GaN-based heterostructure of a blue-violet laser diode, grown by plasma-assisted molecular beam epitaxy on a bulk GaN substrate. Three majority-carrier traps, T1 at E C − 0.28 eV, T2 at E C − 0.60 eV, and T3 at EV + 0.33 eV, were revealed in deep-level transient spectra measured under reverse-bias conditions. On the other hand, deep-level transient spectroscopy measurements performed under injectiondoi:10.12693/aphyspola.112.331 fatcat:ohzaulja6fc53mce2yrwru5m7u