This article describes a fabrication procedure of high performance flexible ferroelectric materials supported on plastic substrates and the characterization of BaTiO 3 thin films on flexible substrates. Ferroelectric BaTiO 3 thin film was deposited using radiofrequency magnetron sputtering on a Pt/Ti/SiO 2 /͑100͒ Si substrate and annealed at 700°C for crystallization. The metal-insulator ͑BaTiO 3 ͒-metal structure was successfully transferred onto flexible substrates by the standard

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... tion and soft lithographic printing methods after removing the underlying sacrificial TiO 2 layer by buffered oxide etchant etching. The dielectric constant of the BaTiO 3 thin films on the flexible substrate was comparable with that on a bulk Si substrate. No significant change in dielectric constant was observed upon bending with various radii and debending.