Pulsed capacitively coupled plasmas (CCPs) are attractive for controlling electron energy distributions f (ε) and plasma properties for microelectronic fabrication. A conceptual design of a pulsed CCP is discussed which provides additional control over the magnitude and composition of the reactive fluxes to the wafer. We present computed images of time-resolved f (ε) and electron density during a pulse period. Index Terms-Electron energy distribution, plasma simulation, pulsed plasma.