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Achieving surface recombination velocity below 10 cm/s in n-type germanium using ALD Al2O3
2021
APL Materials
Desirable intrinsic properties, namely, narrow bandgap and high carrier mobility, make germanium (Ge) an excellent candidate for various applications, such as radiation detectors, multi-junction solar cells, and field effect transistors. Nevertheless, efficient surface passivation of Ge has been an everlasting challenge. In this work, we tackle this problem by applying thermal atomic layer deposited (ALD) aluminum oxide (Al 2 O 3 ), with special focus on the process steps carried out prior to
doi:10.1063/5.0071552
fatcat:jx4uv3uiynainech43weh5rzvu