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Design of class-E GaN HEMT power amplifier using elliptic low pass matching network with 86% efficiency
IEICE Electronics Express
In this paper, a highly efficient prototype of Gallium Nitride high electron mobility transistor (GaN HEMT) power amplifier using elliptic low pass filter output network is proposed, fabricated and measured. A fifth-order elliptic low-pass filter network is designed and implemented for the output matching, which provides optimized fundamental and harmonic impedances. Simulation and experimental results show that a Class-E PA is realized from 2.7 to 2.9 GHz with 10-W (40 dBm) output power, 10 dBdoi:10.1587/elex.10.20120960 fatcat:6w6aaz3o75bcpcon3mienjgk74