Analytical formula for temperature dependence of resistivity in p-type 4H-SiC with wide-range doping concentrations

Satoshi Asada, Jun Suda, Tsunenobu Kimoto
2018 Japanese Journal of Applied Physics  
doi:10.7567/jjap.57.088002 fatcat:s2uwh77wdvbhnp6caldmwpwrq4