A study of minority carrier lifetime versus doping concentration inn‐type GaAs grown by metalorganic chemical vapor deposition

G. B. Lush, H. F. MacMillan, B. M. Keyes, D. H. Levi, M. R. Melloch, R. K. Ahrenkiel, M. S. Lundstrom
1992 Journal of Applied Physics  
Time-resolved photoluminescence decay measurements are used to explore minority carrier recombination in n-type GaAs grown by metalorganic chemical vapor deposition, and doped with selenium to produce electron concentrations from 1.3 X lOi cmm3 to 3.8 X 10" cmm3. For electron densities no < 10" cme3, the lifetime is found to be controlled by radiative recombination and photon recycling with no evidence of Shockley-Read-Hall recombination. For higher electron densities, samples show evidence of
more » ... s show evidence of Shockley-Read-Hall recombination as reflected in the intensity dependence of the photoluminescence decay. Still, we find that radiative recombination and photon recycling are important for all electron concentrations studied, and no evidence for Auger recombination was observed. 1436
doi:10.1063/1.351704 fatcat:tyama5yjdjbmzin4sp5stln4nm