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Time-resolved photoluminescence decay measurements are used to explore minority carrier recombination in n-type GaAs grown by metalorganic chemical vapor deposition, and doped with selenium to produce electron concentrations from 1.3 X lOi cmm3 to 3.8 X 10" cmm3. For electron densities no < 10" cme3, the lifetime is found to be controlled by radiative recombination and photon recycling with no evidence of Shockley-Read-Hall recombination. For higher electron densities, samples show evidence ofdoi:10.1063/1.351704 fatcat:tyama5yjdjbmzin4sp5stln4nm