High-speed divide-by-4/5 prescalers with merged and gates using GaInP/GaAs HBT and SiGe HBT technologies

Hung-Ju Wei, Chinchun Meng, YuWen Chang, Yi-Chen Lin, Guo-Wei Huang
2008 Microwave and optical technology letters (Print)  
This paper demonstrates the divide-by-4/5 prescalers with merged AND gates in 2-m GaInP/GaAs heterojunction bipolar transistor (HBT) and 0.35-m SiGe HBT technologies. By biasing the HBT near the peak transit-time frequency (f T ), the maximum operating frequency of a D-type flip-flop can be promoted. At the supply voltage of 5 V, the GaInP/GaAs prescaler operates from 30 MHz to 5.2 GHz, and the SiGe prescaler has the higher-speed performance of 1-8 GHz at the cost of power consumption.
doi:10.1002/mop.23407 fatcat:cvz4ym4gwrff3fgfrw3lsyyaue