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GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) using wet thermally oxidized InAlP as the gate insulator are reported for the first time. Leakage current measurements show that the 11-nm-thick native oxide grown from an In 0 49 Al 0 51 P layer lattice-matched to GaAs has good insulating properties, with a measured leakage current density of 1 39 10 7 mA m 2 at 1 V bias. GaAs MOSFETs with InAlP native gate oxide have been fabricated with gate lengths from 7 to 2 m. Devices withdoi:10.1109/led.2004.838555 fatcat:nmqu5vq73vb23onkcfdye7issm