Design and fabrication of 50-nm thin-body p-MOSFETs with a SiGe heterostructure channel

Yee-Chia Yeo, V. Subramanian, J. Kedzierski, Peiqi Xuan, Tsu-Jae King, J. Bokor, Chenming Hu
2002 IEEE Transactions on Electron Devices  
Thin-body p-channel MOS transistors with a SiGe/Si heterostructure channel were fabricated on silicon-on-insulator (SOI) substrates. A novel lateral solid-phase epitaxy process was employed to form the thin-body for the suppression of shortchannel effects. A selective silicon implant that breaks up the interfacial oxide was shown to facilitate unilateral crystallization to form a single crystalline channel. Negligible threshold voltage roll-off was observed down to a gate length of 50 nm. The
more » ... gth of 50 nm. The incorporation of Si 0 7 Ge 0 3 in the channel resulted in a 70% enhancement in the drive current. This is the smallest SiGe heterostructurechannel MOS transistor reported to date. This is also the first demonstration of a thin-body MOS transistor incorporating a SiGe heterostructure channel.
doi:10.1109/16.981218 fatcat:udzs5m7jxffcxllc5r5raxntta