Ferroelectric PLZT thin films prepared by chemical solution deposition

Dong Chan Woo, Chang Young Koo, Changho Lee, Kwangsoo No, Hee Young Lee
2001 Ferroelectrics (Print)  
T ransparent polycrystalline PLZT (x/65/35) thin films were prepared using spin-coating technique of complex alkoxide precursor solutions by both 2ME and IMO sol-gel processes. Effects of lanthanum source and amount as well as annealing temperature on the ferroelectric and electro-optic properties were investigated. Microstructure and crystallization behavior were examined using FE-SEM, AFM and XRD. Ferroelectric hysteresis, optical transmittance and linear electro-optic coefficient values of
more » ... e films were also measured. The measured remanent polarization and coercive field values were 5-35 µC/cm 2 and 40-70 kV/cm, respectively. Effective differential Pockels coefficient was approximately 2.4×10 -12 m/V.
doi:10.1080/00150190108016033 fatcat:v2tom4yg5ja27hxkxtkhdxredu