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Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type
IOP Conference Series: Materials Science and Engineering
This paper represents the temperature effect on FinFET transistor and the possibility of using it as a temperature nano-sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the FinFET. Current-voltage characteristics with different values of temperature were simulated. MOS diode connection suggested using the FinFET transistor as a temperature nano-sensor. The final results shows that the best FinFET used as a nanosensor is with GaAs because it has thedoi:10.1088/1757-899x/226/1/012123 fatcat:i4nvpnfq7fd3ffzrpvotpelote