Large-area chemical vapor deposited graphene/boron-nitride (G/BN) thin films are co-transferred layer-by-layer to silicon-di-Oxide (SiO 2 ) substrates, and transistors are constructed and examined. Raman spectra and high resolution transmission electron microscopy imaging show films of high quality. The graphene/boron-nitride/SiO 2 devices have a significantly increased peak electron/hole mobility of 3400/2200 cm 2 /Vs with a reduced effective doping density over reference graphene/ SiO 2

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... s. The mobility dependence as a function of carrier density is compared with a physically based empirical model and is in agreement with the improvements due to a consistent reduction in the substrate induced phonon and impurity scattering and an improvement in the overall surface quality owed to the boron-nitride interlayer that separates the graphene from the SiO 2 . Large-area G/BN thin films are promising for future high performance thin film electronic devices. [http://dx.