A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2006; you can also visit the original URL.
The file type is
1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)
By variation of the thickness and doping concentration of the p+ and intrinsic regions, the barrier height and asymmetry of the structure can be independently varied. A model is developed to investigate the extent to which the above factors may affect the PDBDs' dc characteristics.doi:10.1109/icsict.1998.785960 fatcat:gehl6v5no5f2tc36ydfwmeypam