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Design consideration for planar doped barrier diodes' dc characteristics
1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)
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By variation of the thickness and doping concentration of the p+ and intrinsic regions, the barrier height and asymmetry of the structure can be independently varied. A model is developed to investigate the extent to which the above factors may affect the PDBDs' dc characteristics.
doi:10.1109/icsict.1998.785960
fatcat:gehl6v5no5f2tc36ydfwmeypam