A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2004; you can also visit the original URL.
The file type is
A new small-size Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed to improve the characteristics of other devices. The entire electrode of the LTEIGBT is replaced with a trench-type electrode. The LTEIGBT is designed so that it has a width of 19 mm. While the latch-up current densities of an LIGBT, LTIGBT and LTEIGBT are 120, 540 and 1230 A cm 22 , respectively, that of the proposed LTEIGBT is 10 and two times better than that of the conventional LIGBT anddoi:10.1016/s0026-2692(01)00045-3 fatcat:3e6gmcwvvbcttfa65ywcvdjtn4