Critically coupled surface phonon-polariton excitation in silicon carbide

Burton Neuner III, Dmitriy Korobkin, Chris Fietz, Davy Carole, Gabriel Ferro, Gennady Shvets
2009 Optics Letters  
We observe critical coupling to surface phonon-polaritons in silicon carbide by attenuated total reflection of mid-IR radiation. Reflectance measurements demonstrate critical coupling by a double scan of wavelength and incidence angle. Critical coupling occurs when prism coupling loss is equal to losses in silicon carbide and the substrate, resulting in maximal electric field enhancement.
doi:10.1364/ol.34.002667 pmid:19724526 fatcat:soxczabvcrfxdedcub5hdi7c4a