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High Dose Ion Implantation into Silicon
シリコンへの高濃度イオン打込み
1975
Oyobuturi
シリコンへの高濃度イオン打込み
Preserved Fulltext
Annealing behaviors of the damaged layers in silicon single crystal substrates implanted with the dose of some 1016ions/cm2 were investigated as a function of temperature, duration, and atmosphere of annealing, energy and species of ions, and surface conditions of the sub strates. The nature, density, and distribution of the secondary defects, such as dislocation networks, dislocations both inside and outside of the implanted regions, and stacking faults were determined. The relations of such
doi:10.11470/oubutsu1932.44.596
fatcat:bbjf5wlhtbgu5h42pfli727rfa