Silicon Radiation Detectors with Oxide Charge State Compensation

J. T. Walton, F. S. Goulding
1987 IEEE Transactions on Nuclear Science  
This paper discusses the use of boron implantation on high resistivity P-type silicon before oxide growth to compensate for the presence of charge states in the oxide and oxide/silicon interface. The presence of these charge states on high resistivity P-type silicon produces an inversion layer which causes high leakage currents on N + P junctions and high surface conduc tance. Compensating the surface region by boron implantation is shown to result in oxide passivated N + P junctions with very
more » ... unctions with very low leakage currents and with low surface conductance.
doi:10.1109/tns.1987.4337370 fatcat:372jlmizzvdcdfwh2d4j2cxawy