Novel Virtual Substrates for Future Generation IR Photodetectors [report]

David J. Smith, Yong-Hang Zhang
2014 unpublished
Air Force Materiel Command REPORT DOCUMENTATION PAGE Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing this collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to
more » ... t of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. Abstract: This research has investigated epitaxial InSb, CdTe, MgCdTe, and CdTe/MgCdTe double heterostructures grown on InSb (100) substrates using molecular beam epitaxy. State-ofthe-art materials quality has been successfully achieved in all of these materials, which have demonstrated record narrow X-ray diffraction line-widths, ultra-low defect density, and record long minority carrier lifetime of over 340 ns. All of these findings provide strong evidence that CdTe grown on InSb is highly suitable for use as a virtual substrate for multiple applications, including infrared detectors and the investigation of CdTe solar cells.
doi:10.21236/ada613845 fatcat:mysgg6fitrhydon2cjqtod3bcm