Transport Phenomena in Chemical Mechanical Polishing

R. Shankar Subramanian
1999 Journal of the Electrochemical Society  
Transport phenomena issues that are important in chemical mechanical polishing are identified. A cell model is constructed from first principles which permits the prediction of removal rates of material from a wafer given the operating conditions. Results from the model are illustrated for the polishing of copper films using a slurry containing ferric nitrate.
doi:10.1149/1.1392626 fatcat:lskoofe2ofcorcfuugwvigeqpm