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We report a simple approach to fabricate a pyridinic-N-doped graphene film (N-pGF) without high-temperature heat treatment from perforated graphene oxide (pGO). pGO is produced by a short etching treatment with hydrogen peroxide. GO perforation predominated in a short etching time (∼1 h), inducing larger holes and defects compared to pristine GO. The pGO is advantageous to the formation of a pyridinic N-doped graphene because of strong NH3 adsorption on vacancies with oxygen functional groupsdoi:10.1021/acsomega.8b00400 pmid:31458755 pmcid:PMC6641923 fatcat:l6jnj7nexvcyzcrszgmjxyqnaq