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Characterization of Deposition Process, Microstructure and Interfacial States of Silicon Dioxide Film Using Tetraethylorthosilicate/O[sub 2] with Various Dilution Gases
Journal of the Electrochemical Society
We investigate gas-phase chemistry, and the properties of SiO 2 films and the Si/SiO 2 interface formed by plasma chemical vapor deposition with tetraethylorthosilicate ͑TEOS͒/O 2 and various dilution gases. The N 2 dilution gas produced a faster deposition rate than either He or Ar dilution gases. Excited nitrogen gas reacts with TEOS to form NH radicals, which enhance the dissociation of TEOS. Compared with He, the N 2 dilution gas suppressed the formation of OH radicals in the gas phase anddoi:10.1149/1.1401086 fatcat:vurfryfe6ze5feskphppzn4ogy