Growth and characterization of low composition Ge, x in epi-Si1−x Gex (x ⩽ 10%) active layer for fabrication of hydrogenated bottom solar cell

M Ajmal Khan, R Sato, K Sawano, P Sichanugrist, A Lukianov, Y Ishikawa
2018 Journal of Physics D: Applied Physics  
doi:10.1088/1361-6463/aab80d fatcat:jo5dfw2kajcidoodrmsg2uf2ja