RF Power Performance of Asymmetric-LDD MOS Transistor for RF-CMOS SOC Design

Ming-Chu King, Tsu Chang, Albert Chin
2007 IEEE Microwave and Wireless Components Letters  
This letter presents a new asymmetric-lightly-dopeddrain (LDD) metal oxide semiconductor (MOS) transistor that is fully embedded in a CMOS logic without any process modification. The radio frequency (RF) power performance of both conventional and asymmetric MOS transistor is measured and compared. The output power can be improved by 38% at peak power-added efficiency (PAE). The PAE is also improved by 16% at 10-dBm output power and 2.4 GHz. These significant improvements of RF power performance
more » ... by this new MOS transistor make the RF-CMOS system-on-chip design a step further. Index Terms-Lightly-doped-drain (LDD), metal oxide semiconductor field effect transistor (MOSFET), metal oxide semiconductor (MOS) transistor, radio frequency (RF) power transistor.
doi:10.1109/lmwc.2007.897796 fatcat:bsdtb5ymtbdltpr5hu7zc7jery