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RF Power Performance of Asymmetric-LDD MOS Transistor for RF-CMOS SOC Design
2007
IEEE Microwave and Wireless Components Letters
This letter presents a new asymmetric-lightly-dopeddrain (LDD) metal oxide semiconductor (MOS) transistor that is fully embedded in a CMOS logic without any process modification. The radio frequency (RF) power performance of both conventional and asymmetric MOS transistor is measured and compared. The output power can be improved by 38% at peak power-added efficiency (PAE). The PAE is also improved by 16% at 10-dBm output power and 2.4 GHz. These significant improvements of RF power performance
doi:10.1109/lmwc.2007.897796
fatcat:bsdtb5ymtbdltpr5hu7zc7jery