A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2012; you can also visit the original URL.
The file type is
Angle-resolved photoemission measurements of the Si 2p core level as a function of polar emission angle were carried out to investigate the atomic populations and depth distributions of Si in various oxidation states for a SiO 2 film thermally grown on Si(111). The suboxide states including Si 11 , Si 21 , and Si 31 exhibit different depth distributions. Despite these differences, the results are consistent with a chemically abrupt interface. A simple model based on the statisticaldoi:10.1103/physrevlett.79.3014 fatcat:yqdeieztx5hwlgpjkxne7gmpxq