Dealing with IC manufacturability in extreme scaling

Bei Yu, Jhih-Rong Gao, Duo Ding, Yongchan Ban, Jae-seok Yang, Kun Yuan, Minsik Cho, David Z. Pan
2012 Proceedings of the International Conference on Computer-Aided Design - ICCAD '12  
As the CMOS feature enters the era of extreme scaling (14nm, 11nm and beyond), manufacturability challenges are exacerbated. The nanopatterning through the 193nm lithography is being pushed to its limit, through double/triple or more general multiple patterning, while non-conventional lithography technologies such as extreme ultra-violet (EUV), e-beam direct-write (EBDW), and so on, still have grand challenges to be solved for their adoption into IC volume production. This tutorial will provide
more » ... torial will provide an overview of key overarching issues in nanometer IC design for manufacturability (DFM) with these emerging lithography technologies, from modeling, mask synthesis, to physical design and beyond.
doi:10.1145/2429384.2429430 dblp:conf/iccad/YuGDBYYCP12 fatcat:txbiun44a5d4loroiimr4nllie