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The effects of an N 2 O anneal on the radiation effects of a split-gate electrical erasable programmable read only memory (EEPROM)/flash cell with a recently-proposed hornshaped floating gate were studied. We have found that although the cells appear to survive 1 Mrad(Si) Co 60 irradiation without data retention failure, the write/erase cycling endurance was severely impeded after irradiation. Specifically, the write/erase cycling endurance was degraded to 20 K from the pre-irradiation value ofdoi:10.1109/55.701435 fatcat:etmi5a52qzga5ggtlaunonhokq