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We investigate, through first-principles calculations, the energetics of substitutional carbon and oxygen impurities as well as complexes involving these impurities and vacancies in cubic boron nitride (c-BN). The formation energies and the electronic and structural properties of these defects in their various charge states are investigated. We find that, under a boron-rich condition, both the carbon and the oxygen impurities at the nitrogen site (C N and O N ) have formation energiesdoi:10.1103/physrevb.62.10135 fatcat:etixxn7u2vaczep3dow2hkukje