A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2018; you can also visit the original URL.
The file type is
In this work, the irreversible processes in light heating of Silicon (Si) and Germanium (Ge) thin films are examined. Each film is exposed to light irradiation with radiative and convective boundary conditions. Heat, electron and hole transport and generation-recombination processes of electron-hole pairs are studied in terms of a phenomenological model obtained from basic principles of irreversible thermodynamics. We present an analysis of the contributions to the entropy production in thedoi:10.3390/e17074786 fatcat:mmsrfn4555dzbfdyl6pcltfplm