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Modeling and Analysis of Entropy Generation in Light Heating of Nanoscaled Silicon and Germanium Thin Films
2015
Entropy
In this work, the irreversible processes in light heating of Silicon (Si) and Germanium (Ge) thin films are examined. Each film is exposed to light irradiation with radiative and convective boundary conditions. Heat, electron and hole transport and generation-recombination processes of electron-hole pairs are studied in terms of a phenomenological model obtained from basic principles of irreversible thermodynamics. We present an analysis of the contributions to the entropy production in the
doi:10.3390/e17074786
fatcat:mmsrfn4555dzbfdyl6pcltfplm