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AlN thin films were grown on HF-etched Si͑111͒ substrates at 400-600°C by plasma source molecular beam epitaxy. Reflection high energy electron diffraction and transmission electron microscopy studies show that AlN films grown at 400°C form an initial amorphous region at the interface, followed by c-axis oriented columnar grains with slightly different tilts and twists. AlN films grown at 600°C showed a significantly reduced amorphous region near the interface promoting an epitaxial growth ofdoi:10.1063/1.370600 fatcat:6xf7amt4lvcnde6w2x2butj2uq