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Effects of Deposition Pressure on the Phase Formation and Electrical Properties of BiFeO3Films Deposited by Sputtering
2009
Korean Journal of Materials Research
BiFeO 3 (BFO) thin films were prepared on Pt/TiO 2 /Si substrate by r.f. magnetron sputtering. The effects of deposition pressure on electrical properties were investigated using measurement of dielectric properties, leakage current and polarization. When BFO targets were prepared, Fe atoms were substituted with Mn 0.05% to increase electrical resistivity of films. (Fe + Mn)/Bi ratio of BFO thin films increases with increasing partial pressure of O 2 gas. The deposited films showed the only BFO
doi:10.3740/mrsk.2009.19.11.601
fatcat:6ywte5t2jnc7jfzh4mrihhwgta