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Low-temperature anomalous specific heat without tunneling modes: A simulation fora−Siwith voids
2000
Physical Review B (Condensed Matter)
Using empirical potential molecular dynamics we compute dynamical matrix eigenvalues and eigenvectors for a 4096 atom model of amorphous silicon and a set of models with voids of different size based on it. This information is then employed to study the localization properties of the low-energy vibrational states, calculate the specific heat C(T) and examine the low-temperature properties of our models usually attributed to the presence of tunneling states in amorphous silicon. The results of
doi:10.1103/physrevb.61.5376
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