A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2018; you can also visit the original URL.
The file type is application/pdf
.
Growth Kinetics and Electrical Characteristics of Thermal Silicon Dioxide Grown at Low Temperatures
1993
Journal of the Electrochemical Society
The oxidation kinetics and electrical characteristics of thermal silicon dioxide grown between 650 and 750~ have been measured and compared to oxides grown at higher temperatures. The majority of the growth occurs in the rapid oxidation regime. The growth rate results agree well with the theory of Massoud, 9 with appropriate low temperature extrapolations. Chlorinated oxidation shows some growth rate enhancement. The interface state density is found to be slightly higher in low temperature
doi:10.1149/1.2221076
fatcat:gbelxxyjv5gxhjgybhvcsewqi4