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A Silicon Germanium, High Efficiency Power Amplifier Chipset for GSM/DCS-PCS/WCDMA Handset Applications
2001
31st European Microwave Conference, 2001
A power amplifier chipset for GSM and WCDMA mobile handset PAs has been designed and fabricated in the IBM Silicon Germanium BiCMOS 5AM process. This 3-chip set offers competitive performance and reliability for integrated GSM/DCS-PCS/WCDMA applications. The constant envelope (GSM and DCS-PCS) power amplifier designs are optimized for efficiency under pulsed GMSK conditions, achieving 55% and 45% PAE at 900 and 1880 MHz, respectively, at 3.4 V. The linear (WCDMA) amplifier performance has been
doi:10.1109/euma.2001.339190
fatcat:pkrwnojtifettjhfnksxfsobti