A CMOS band-gap reference circuit with sub 1 V operation

H. Banba, H. Shiga, A. Umezawa, T. Miyaba, T. Tanzawa, S. Atsumi, K. Sakui
1998 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.98CH36215)  
This paper proposes a CMOS bandgap reference (BGR) circuit, which can successfully operate with sub-1-V supply. In the conventional BGR circuit, the output voltage V ref V ref V ref is the sum of the built-in voltage of the diode V f V f V f and the thermal voltage V T V T V T of kT=q kT=q kT=q multiplied by a constant. Therefore, V ref V ref V ref is about 1.25 V, which limits a low supply-voltage operation below 1 V. Conversely, in the proposed BGR circuit, V ref V ref V ref has been
more » ... f has been converted from the sum of two currents; one is proportional to V f V f V f and the other is proportional to V T V T V T . An experimental BGR circuit, which is simply composed of a CMOS op-amp, diodes, and resistors, has been fabricated in a conventional 0.4-m flash memory process. Measured V ref V ref V ref is 518 6 15 mV (3 ) for 23 samples on the same wafer at 27-125 C.
doi:10.1109/vlsic.1998.688094 fatcat:2fpeoxoncbenzg3clzg6g2fek4