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A Three-Dimensional Packaging Method for Al-metallized SiC Power Devices
アルミ電極を有するSiCパワー素子の三次元実装技術
2008
MES
アルミ電極を有するSiCパワー素子の三次元実装技術
Preserved Fulltext
A novel three-dimensional packaging method for Al-metalized SiC power devices has been developed using Au-stud -bumping technology and vacuum reflow soldering process. The die shear strength of an Al-metalized electrode of a SiC-SBD chip bonded on a AlN/Cu/Ni(Au) substrate reached up to 78.7MPa, similar to that of the die side of the chip. After aging at 250 ℃ for 1000 hrs, the electrical resistivity only increased about 0.4%, and the die shear strength was 38 MPa, which was much higher than
doi:10.11486/mes.18.0_2b3-1
fatcat:ynmuzzvlmnckzkn62up3lruqkm