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Novel ultrasensitive detectors in the wavelength range of λ = 5-50 μm have developed. The detectors are charge-sensitive infrared phototransistors (CSIPs) fabricated in GaAs/AlGaAs double quantum well structures. The devices serve as a phototransistor capable of counting single photons, while a function is similarly to CMOS image sensors. The excellent noise equivalent power (NEP = 6.8×10-19 W/Hz1/2) and specific detectivity (D* = 1.2×1015 cmHz1/2/W) are demonstrated for λ = 14.7 μm, which aredoaj:21b6e6799f7a4d4abdb0a1f99a47f77c fatcat:dj4hmbmga5aptc2txcxp3jvn7a