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Gate leakage-current, damaged gate and open-circuit failure-mode of recent SiC Power Mosfet : Overview and analysis of unique properties for converter protection and possible future safety management

Frederic Richardeau, Francois Boige, Stephane Lefebvre
2018 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC)  

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To cite this version: Frédéric Richardeau, François Boige, Stéphane Lefebvre. Gate leakage-current, damaged gate and open-circuit failure-mode of recent SiC Power Mosfet : Overview and analysis of unique properties for converter protection and possible future safety management. Abstract-The silicon carbide MOSFETs tend to become the standard for high-performance medium voltage power electronics in terms of compactness and efficiency. Although the weakness of its gate-oxide and the relatively
more » ... short-circuit time capability are known limitations, this device reveals interesting unique properties. In this paper the authors explore the gate leakagecurrent behavior in normal and pre-damage operations as well as the conditions for obtaining an atypical and very interesting failto-open mode which has never been observed with silicon dies. These properties may be used for dedicated and innovative protection techniques for safer converter.
doi:10.1109/esars-itec.2018.8607551 fatcat:h3jsp4yz2fdrpp35pyfgguu3ce
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Frederic Richardeau, Francois Boige, Stephane Lefebvre. "Gate leakage-current, damaged gate and open-circuit failure-mode of recent SiC Power Mosfet : Overview and analysis of unique properties for converter protection and possible future safety management." 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC) (2018)