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Edge-TCT method was used to extract velocity profiles in heavily irradiated silicon micro-strip detectors. Detectors were irradiated up to 10 16 cm −2 with reactor neutrons, 200 MeV pions and a combination of both. A simple electric field model assuming two space charge regions at each side of the detector and neutral bulk in-between was found to describe the field profile. It was observed that after heavy irradiation a sizeable electric field is present in the entire detector volume. Fordoi:10.1088/1748-0221/9/10/p10016 fatcat:a6pucnn7qffppdatzakgkgh7z4