receiv ・d f・r publi ・ati ・ n Ap ・il ・25 , 1998 ) Present status of 皿 一 nitridc epitaxial growth technique by molecular beam epi 亡axy ( MBE )is reviewed . Recent development of growth facilities including effective nitregen sources have enab 互 ed us to obtain high growth rate , well − defined fiat sur ね ccs etc . , which resuls in better understandings of growth mechanism and sur 飴 ce phc − nomena of 皿 一 nitrides . Owing to the understandings of these information on MBE growth of 皿 一 nitrides ,

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... he quality of MBE − grown 皿 一 nitride epilayers has been so much improved to be comparable to that of MOCVD ・ gmwn epilayers . Device app ] ication using MBE − grown 皿 一 nitride epilayers is also shewn , and several problems to be solved in MBE are discussed. E −mail : ・ kumura @ etl , 9 。 . . ip