PSP-Based Scalable MOS Varactor Model

J. Victory, Z. Zhu, Q. Zhou, W. Wu, G. Gildenblat, Z. Yan, J. Cordovez, C. McAndrew, F. Anderson, J.C.J. Paasschens, R. van Langevelde, P. Kolev (+2 others)
2007 2007 IEEE Custom Integrated Circuits Conference  
A physically based scalable model for MOS Varactors is presented. The model includes a PSP-based analytical surface potential charge formulation, MOS varactor specific gate current models, and physical geometry and process parameter based parasitic modeling. Key device performances of capacitance and quality factor Q are validated over voltage, frequency, and geometry, for several technologies. The model, implemented in Verilog-A, provides robust and accurate RF simulation of MOS varactors. A VCO design application is detailed.
doi:10.1109/cicc.2007.4405780 dblp:conf/cicc/VictoryZZWGYCMAPLKCY07 fatcat:7qehzyvkdndi5iga5n5dojqz6q