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Transport mechanisms in porous silicon
1998
Journal of Applied Physics
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The current transport mechanism through porous silicon ͑PS͒ films fabricated from 8 to 12 ⍀ cm p-type silicon (p-Si) substrates has been investigated using current-voltage I(V) measurements on metal/PS/p-Si/metal devices in the temperature range of 77-300 K. The characteristics for all devices show a rectifying behavior with ideality factor very close to unity. A value of 0.7 eV is obtained for the barrier height at the interface between PS and bulk p-Si at room temperature and the barrier
doi:10.1063/1.368476
fatcat:cfztjzwplvhulck2ks2p626f4a