Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates

Zhi-Yuan Cheng, M.T. Currie, C.W. Leitz, G. Taraschi, E.A. Fitzgerald, J.L. Hoyt, D.A. Antoniadas
2001 IEEE Electron Device Letters  
We demonstrate electron mobility enhancement in strained-Si n-MOSFETs fabricated on relaxed Si 1 Ge -on-insulator (SGOI) substrates with a high Ge content of 25%. The substrates were fabricated by wafer bonding and etch-back utilizing a 20% Ge layer as an etch stop. Epitaxial regrowth was used to produce the upper portion of the Si 0 75 Ge 0 25 and the surface strained Si layer. Large-area strained-Si n-MOSFETs were fabricated on this SGOI substrate. The measured electron mobility shows
more » ... ant enhancement over both the universal mobility and that of co-processed bulk-Si MOSFETs. This SGOI process has a low thermal budget and thus is compatible with a wide range of Ge contents in Si 1 Ge layer.
doi:10.1109/55.930678 fatcat:wffqlik2kjbxbmdtd4tsw4rsqm