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Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates
2001
IEEE Electron Device Letters
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We demonstrate electron mobility enhancement in strained-Si n-MOSFETs fabricated on relaxed Si 1 Ge -on-insulator (SGOI) substrates with a high Ge content of 25%. The substrates were fabricated by wafer bonding and etch-back utilizing a 20% Ge layer as an etch stop. Epitaxial regrowth was used to produce the upper portion of the Si 0 75 Ge 0 25 and the surface strained Si layer. Large-area strained-Si n-MOSFETs were fabricated on this SGOI substrate. The measured electron mobility shows
doi:10.1109/55.930678
fatcat:wffqlik2kjbxbmdtd4tsw4rsqm