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Recombination peculiarities in doped Ge
Lithuanian Journal of Physics
Peculiarities of recombination processes in Czochralski (Cz) grown Ge wafers of n-and p-type material are investigated. Recombination characteristics in n-Ge implanted with Co, Fe, Ti, Ni, and Cr are studied before and after annealing. A decrease of the carrier lifetime with increasing doping density has been observed both for n-and p-type Ge using the same excitation level. This decrease is analysed by assuming an increase of the concentration of recombination centres with increasing dopingdoi:10.3952/lithjphys.47322 fatcat:ai2xjfgwdfgkfpkqnwngxn7k3e