Energy dependence of the Nernst-Ettingshausen effect induced by pulsed laser light in bismuth films

M. Sánchez Balmaseda, J. C. G. de Sande, J. M. Guerra Pérez
1994 Physical Review B (Condensed Matter)  
The behavior with the irradiation energy and with the magnetic field of the thermomagnetic response induced by laser pulses in 5.5-^xm Bi films at room temperature is reported in this paper. The Nernst-Ettingshausen coefficient at an applied magnetic field of 1 T is estimated: QNE -1-OX 10~5 V/TK. A good agreement is found when these results are compared with those reported earlier in polycrystalline bulk samples obtained by a conventional method. This supports the reliability of the pulsed
more » ... r technique in the measurement of weak transport effects and indicates that the optically pumped carriers hardly influence the transport properties of bismuth.
doi:10.1103/physrevb.50.14561 pmid:9975679 fatcat:tmfl5voufrdhlgfx6xavmvdrrq