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The purpose of this study is to characterize the nanometer-scale structure of an Al2O3-W-Ge multilayer utilizing x-ray reflectivity. Attributes such as layer thickness, density, surface, and interface roughness are determined and explained. The reasons for using this particular multilayer are also reviewed, as well as the benefits to science and the semiconductor industry.doi:10.21985/n24x5z fatcat:rndaos7g3bgkhl7w6nfc4jvzym