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A proposal for epitaxial thin film growth in outer space
1988
Metallurgical Transactions A
A new concept for materials processing in space exploits the ultra vacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10~14 torr or better pressures, semi-infinite pumping speeds and large ultra vacuum volume (~100 m3) without walls. These space ultra vacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials especially in the area of semiconductors for
doi:10.1007/bf02645795
fatcat:e2esykqmu5hdpag254hgpltnsy